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| SP8M2 Transistors 4V Drive Nch+Pch MOS FET SP8M2 Structure Silicon N-channel MOS FET / Silicon P-channel MOS FET External dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 1pin mark 1.27 0.2 Each lead has same dimensions Applications Switching Package specifications Package Type SP8M2 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) 2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain 1 1 (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : N-ch Tr2 : P-ch 30 -30 20 -20 3.5 3.5 14 14 1.6 -1.6 14 -14 2.0 150 -55 to +150 Unit V V A A A A W / TOTAL C C 0.4Min. Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). (1) (4) 3.9 6.0 1/3 SP8M2 Transistors N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. - 30 - 1.0 - - - 2.0 - - - - - - - - - - Typ. - - - - 59 93 107 - 140 45 30 6 6 17 4 2.5 0.8 0.8 Max. 10 - 1 2.5 83 130 150 - - - - - - - - 3.5 - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 3.5A, VGS= 10V ID= 3.5A, VGS= 4.5V ID= 3.5A, VGS= 4V VDS= 10V, ID= 3.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1.75A VGS= 10V RL= 8.57 RG=10 VDD 15V, VGS= 5V ID= 3.5A RL= 4.29, RG= 10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 6.4A, VGS=0V 2/3 SP8M2 Transistors P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 IDSS Zero gate voltage drain current - VGS (th) -1.0 Gate threshold voltage - Static drain-source on-state RDS (on) - resistance - Yfs 1.8 Forward transfer admittance Ciss - Input capacitance Coss Output capacitance - Crss Reverse transfer capacitance - Turn-on delay time - td (on) Rise time - tr Turn-off delay time - td (off) Fall time - tf Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge - Qgd Pulsed Typ. - - - - 65 100 120 - 490 110 75 10 15 35 10 5.5 1.5 2.0 Max. -10 - -1 -2.5 90 140 165 - - - - - - - - 7.7 - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= -20V, VDS=0V ID= -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -3.5A, VGS= -10V ID= -1.75A, VGS= -4.5V ID= -1.75A, VGS= -4V VDS= -10V, ID= -1.75A VDS= -10V VGS= 0V f=1MHz VDD -15V ID= -1.75A VGS= -10V RL= 8.57 RG= 10 VDD -15V, VGS= -5V ID= -3.5A RL= 4.29, RG= 10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -1.6A, VGS=0V 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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